Anisotropic and controllable Gilbert-Bloch dissipation in spin valves

Spin valves form a key building block in a wide range of spintronic concepts and devices from magnetoresistive read heads to spin-transfer-torque oscillators. We elucidate the dependence of the magnetic damping in the free layer on the angle its equilibrium magnetization makes with that in the fixed layer. The spin pumping-mediated damping is anisotropic and tensorial, with Gilbert- and Bloch-like terms. Our investigation reveals a mechanism for tuning the free layer damping in-situ from negligible to a large value via the orientation of fixed layer magnetization, especially when the magnets are electrically insulating. Furthermore, we expect the Bloch contribution that emerges from the longitudinal spin accumulation in the non-magnetic spacer to play an important role in a wide range of other phenomena in spin valves

Proximity-Enhanced Magnetocaloric Effect in Ferromagnetic Trilayers

The demagnetization and associated magnetocaloric effect in strong-weak-strong ferromagnetic trilayers, upon a reorientation of the strong ferromagnets from parallel to antiparallel magnetization, is simulated using atomistic spin dynamics. The simulations yield non-trivial spin distributions in the antiparallel state, which in turn allows entropy to be calculated directly. Empirical functional forms are obtained for the magnetization distribution in the spacer, differing significantly from some of the commonly used models. Finally, we find that the magnetocaloric effect in the system can be significantly improved by allowing the local exchange to vary through the spacer, which in practice can be implemented by spatially tailoring the spacer's magnetic dilution.Comment: 8 pages, 6 figure

Sub-Wavelength Terahertz Spin-Flip Laser Based on a Magnetic Point-Contact Array

We present a novel design for a single-mode, truly sub-wavelength THz disk laser based on a nano-composite gain medium comprising an array of metal/ferromagnetic point contacts embedded in a thin dielectric layer. Stimulated emission of light occurs in the point contacts as a result of spin-flip relaxation of spin-polarized electrons that are injected from the ferromagnetic side of the contacts. Ultra-high electrical current densities in the contacts and a dielectric material with a large refractive index, neither condition being achievable in conventional semiconductor media, allows the thresholds of lasing to be overcome for the lowest-order modes of the disk, hence making single-mode operation possible.Comment: 9 pages,4 figure

All-electrical operation of a Curie-switch at room temperature

We present all-electrical operation of a Fe$_x$Cr$_{1-x}$-based Curie switch at room temperature. More specifically, we study the current-induced thermally-driven transition from ferromagnetic to antiferromagnetic Ruderman-Kittel-Kasuya-Yosida (RKKY) indirect coupling in a Fe/Cr/Fe$_{17.5}$Cr$_{82.5}$/Cr/Fe multilayer. Magnetometry measurements at different temperatures show that the transition from the ferromagnetic to the antiferromagnetic coupling at zero field is observed at $\sim$325K. Analytical modelling confirms that the observed temperature-dependent transition from indirect ferromagnetic to indirect antiferromangetic interlayer exchange coupling originates from the modification of the effective interlayer exchange constant through the ferromagnetic-to-paramagnetic transition in the Fe$_{17.5}$Cr$_{82.5}$ spacer with minor contributions from the thermally-driven variations of the magnetization and magnetic anisotropy of the Fe layers. Room-temperature current-in-plane magnetotransport measurements on the patterned Fe/Cr/Fe$_{17.5}$Cr$_{82.5}$/Cr/Fe strips show the transition from the 'low-resistance' parallel to the 'high-resistance' antiparallel remanent magnetization configuration, upon increased probing current density. Quantitative comparison of the switching fields, obtained by magnetometry and magnetotransport, confirms that the Joule heating is the main mechanism responsible for the observed current-induced resistive switching.Comment: 8 pages, 4 figure

Relaxation-free and inertial switching in synthetic antiferromagnets subject to super-resonant excitation

Applications of magnetic memory devices greatly benefit from ultra-fast, low-power switching. Here we propose how this can be achieved efficiently in a nano-sized synthetic antiferromagnet by using perpendicular-to-the-plane picosecond-range magnetic field pulses. Our detailed micromagnetic simulations, supported by analytical results, yield the parameter space where inertial switching and relaxation-free switching can be achieved in the system. We furthermore discuss the advantages of dynamic switching in synthetic antiferromagnets and, specifically, their relatively low-power switching as compared to that in single ferromagnetic particles. Finally, we show how excitation of spin-waves in the system can be used to significantly reduce the post-switching spin oscillations for practical device geometries.QC 20160524</p

Relaxation-free and inertial switching in synthetic antiferromagnets subject to super-resonant excitation

Applications of magnetic memory devices greatly benefit from ultra-fast, low-power switching. Here we propose how this can be achieved efficiently in a nano-sized synthetic antiferromagnet by using perpendicular-to-the-plane picosecond-range magnetic field pulses. Our detailed micromagnetic simulations, supported by analytical results, yield the parameter space where inertial switching and relaxation-free switching can be achieved in the system. We furthermore discuss the advantages of dynamic switching in synthetic antiferromagnets and, specifically, their relatively low-power switching as compared to that in single ferromagnetic particles. Finally, we show how excitation of spin-waves in the system can be used to significantly reduce the post-switching spin oscillations for practical device geometries.QC 20160524</p